Hoʻokomo ʻia nā kristal Tm doped i nā hiʻohiʻona nani e koho iā lākou i mea koho no nā kumu laser solid-state me ka lōʻihi hawewe hoʻokuʻu ʻia a puni 2um.Ua hōʻike ʻia e hiki ke hoʻokani ʻia ka laser Tm:YAG mai 1.91 a hiki i 2.15um.Pēlā nō, hiki i ka laser Tm: YAP ke hoʻolohe mai ka 1.85 a i ka 2.03 um. ʻO ka ʻōnaehana quasi-ʻekolu pae o Tm: pono nā kristal doped kūpono i ka geometry pumping a me ka unuhi wela maikaʻi mai ka media hana. ʻO ka manawa ola fluorescence lōʻihi, he mea hoihoi ia no ka hana Q-Switched kiʻekiʻe. Eia kekahi, ʻo ka hoʻomaha hoʻomaha maikaʻi me nā Tm3 + ion e hoʻopuka ana i ʻelua photons excitation ma luna o ka pae laser kiʻekiʻe no hoʻokahi photon pahū hoʻoheheʻe ʻia. ʻoi aku ka maikaʻi e pili ana i ʻelua a hōʻemi i ka hoʻouka wela.
Ua loaʻa iā Tm:YAG a me Tm:YAP kā lākou noi i nā lasers lapaʻau, nā radar a me ka ʻike lewa.
Pili nā waiwai o Tm:YAP i ka hoʻonohonoho ʻana o nā kristal.
Nā pōmaikaʻi o Tm:YAP Crysta:
ʻOi aku ka maikaʻi ma ka laulā 2μm i hoʻohālikelike ʻia me Tm:YAG
ʻO ke kukui hoʻopuka polarized laina
ʻO ka pūnae absorption ākea o 4nm i hoʻohālikelike ʻia me Tm:YAG
Loaʻa i ka 795nm me AlGaAs diode ma mua o ka adsorption peak o Tm:YAG ma 785nm
Nā waiwai kumu:
Hui lewa | D162h (Pnma) |
Lattice mau (Å) | a=5.307,b=7.355,c=5.176 |
Ka helu hehee(℃) | 1850±30 |
Ka helu hehee(℃) | 0.11 |
Hoʻonui wela(10-6·K-1) | 4.3//a,10.8//b,9.5//c |
ʻO ka mānoanoa (g/cm-3) | 4.3//a,10.8//b,9.5//c |
Hōʻike hōʻike | 1.943//a,1.952//b,1.929//pōkii 0.589 mm |
Ka paakiki (Mohs scale) | 8.5-9 |
Nā kikoʻī:
ʻO ka hui ʻana o Dopant | Tm: 0.2~15at% |
Kūlana | i loko o 5° |
“ke kuhi hewa | <0.125A/inch@632.8nm |
7 mau nui | anawaena 2~10mm, Length 2~100mm Jpon noi o ka mea kūʻai |
ʻO ka hoʻomanawanui ʻana | Anawaena +0.00/-0.05mm, Loihi: ± 0.5mm |
Paʻa pahu | Ka lepo a i poni ʻia |
Hoʻolikelike | ≤10″ |
Perpendicularity | ≤5′ |
Palahalaha | ≤λ/8@632.8nm |
ili maikaʻi | L0-5(MIL-0-13830B) |
Chamfer | 3.15 ±0.05 mm |
ʻO ka hoʻohālikelike ʻana i ka uhi ʻana o AR | < 0.25% |